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MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm

  1. 1.
    Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Krčil, Pavel - Hulicius, Eduard - Komninou, Ph. - Kioseoglou, J.
    MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm.
    Journal of Crystal Growth. Roč. 414, Mar (2015), 167-171. ISSN 0022-0248
    Impact factor: 1.462, year: 2015
    http://hdl.handle.net/11104/0250242