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The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene
- 1.Kalbáč, Martin - Reina-Cecco, A. - Farhat, H. - Kong, J. - Kavan, Ladislav - Dresselhaus, M. S.
The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene.
ACS Nano. Roč. 4, č. 10 (2010), s. 6055-6063. ISSN 1936-0851. E-ISSN 1936-086X
Impact factor: 9.855, year: 2010
http://hdl.handle.net/11104/0192407
Number of the records: 1