Number of the records: 1
Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs
- 1.Hazdra, P. - Oswald, Jiří - Komarnitskyy, V. - Kuldová, Karla - Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří
Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs.
Superlattices and Microstructures. Roč. 46, 1-2 (2009), 324-327. ISSN 0749-6036. E-ISSN 1096-3677
Impact factor: 0.910, year: 2009
http://hdl.handle.net/11104/0176305
Number of the records: 1