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Long range influence of macroscopic defects on photoluminescence of GaN/InGaN multiple quantum well structures

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    0479300 - FZÚ 2018 RIV FR eng C - Conference Paper (international conference)
    Kuldová, Karla - Kretková, Tereza - Novotný, Radek - Hospodková, Alice - Zíková, Markéta - Pangrác, Jiří
    Long range influence of macroscopic defects on photoluminescence of GaN/InGaN multiple quantum well structures.
    EWMOVPE 17 - 17th European Workshop on Metalorganic Vapour Phase Epitaxy. Grenoble, 2017 - (Eymery, J.), s. 40-40
    [EWMOVPE 17 - 17th European Workshop on Metalorganic Vapour Phase Epitaxy. Grenoble (FR), 18.06.2017-21.06.2017]
    Institutional support: RVO:68378271
    Keywords : MOVPE * GaN * photoluminescece * Raman spectroscopy * macroscopic defects
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)

    Permanent Link: http://hdl.handle.net/11104/0275561
     
Number of the records: 1  

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