Photoionization and transient Wannier-Stark ladder in silicon: First-principles simulations versus Keldysh theory

0561201 - FZÚ 2023 RIV US eng J - Journal Article
Derrien, Thibault - Tancogne-Dejean, N. - Zhukov, Vladimir - Appel, H. - Rubio, A. - Bulgakova, Nadezhda M.
Photoionization and transient Wannier-Stark ladder in silicon: First-principles simulations versus Keldysh theory.
Physical Review B. Roč. 104, č. 24 (2021), č. článku L241201. ISSN 2469-9950. E-ISSN 2469-9969
R&D Projects: GA MŠMT EF15_003/0000445; GA MŠMT EF15_006/0000674
EU Projects: European Commission(XE) 823897 - ATLANTIC
Grant - others:OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445; OP VVV - HiLASE-CoE(XE) CZ.02.1.01/0.0/0.0/15_006/0000674
Research Infrastructure: e-INFRA CZ - 90140
Institutional support: RVO:68378271
Keywords : nonlinear photoionization * semiconductors * Keldysh theory * TDDFT * silicon crystal * ultrashort laser
OECD category: Optics (including laser optics and quantum optics)
Impact factor: 3.908, year: 2021
Method of publishing: Open access

Permanent Link: https://hdl.handle.net/11104/0333877