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Defect structures in (001) zincblende GaN/3C-SiC nucleation layers

  1. 1.
    0541992 - ÚFM 2022 RIV US eng J - Journal Article
    Vacek, Petr - Frentrup, M. - Lee, L. Y. - Massabuau, Fabien C. P. - Kappers, Menno J. - Wallis, David J. - Gröger, Roman - Oliver, Rachel A.
    Defect structures in (001) zincblende GaN/3C-SiC nucleation layers.
    Journal of Applied Physics. Roč. 129, č. 15 (2021), č. článku 155306. ISSN 0021-8979. E-ISSN 1089-7550
    R&D Projects: GA MŠMT(CZ) EF16_027/0008056
    Institutional support: RVO:68081723
    Keywords : stacking faults * gallium nitride * transmission electron microscopy
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 2.877, year: 2021
    Method of publishing: Open access
    https://aip.scitation.org/doi/10.1063/5.0036366

    Permanent Link: http://hdl.handle.net/11104/0319746
     
Number of the records: 1  

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