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InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots
- 1.0373041 - FZÚ 2012 US eng A - Abstract
Hospodková, Alice - Hulicius, Eduard - Oswald, Jiří - Pangrác, Jiří - Hazdra, P. - Caha, O. - Vyskočil, Jan - Kuldová, Karla
InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots.
The 14th US Biennial Workshop on Organometallic Vapor Phase Epitaxy. 2009 Abstract Book. Warren: American Association for Crystal Growth, 2009. s. 68. ISBN N.
[US Biennial Workshop on Organometallic Vapor Phase Epitaxy /14./. 09.08.2009-14.08.2009, Lake Geneva, Wisconsin]
R&D Projects: GA ČR GA202/09/0676
Keywords : low dimensional structures * photoluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III/V materials
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0006873
Number of the records: 1