Number of the records: 1
Magnetism in GaN layers implanted by La, Gd, Dy and Lu
- 1.0365408 - ÚJF 2012 RIV CH eng J - Journal Article
Sofer, Z. - Sedmidubský, D. - Moram, M. - Macková, Anna - Buchal, C. - Hardtdegen, H. - Václavů, M. - Peřina, Vratislav - Groetzschel, R. - Mikulics, M. - Hejtmánek, Jiří - Maryško, Miroslav
Magnetism in GaN layers implanted by La, Gd, Dy and Lu.
Thin Solid Films. Roč. 519, č. 18 (2011), s. 6120-6125. ISSN 0040-6090. E-ISSN 1879-2731
R&D Projects: GA ČR GA104/09/1269; GA ČR GA106/09/0125; GA ČR GA104/09/0621
Institutional research plan: CEZ:AV0Z10480505; CEZ:AV0Z10100521
Keywords : Magnetic semiconductors * III-V semiconductors * Ion implantation * X-ray diffraction * Rutherford backscattering spectroscopy
Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders
Impact factor: 1.890, year: 2011
Permanent Link: http://hdl.handle.net/11104/0200656
Number of the records: 1