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The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene
- 1.0353061 - ÚFCH JH 2011 RIV US eng J - Journal Article
Kalbáč, Martin - Reina-Cecco, A. - Farhat, H. - Kong, J. - Kavan, Ladislav - Dresselhaus, M. S.
The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene.
ACS Nano. Roč. 4, č. 10 (2010), s. 6055-6063. ISSN 1936-0851. E-ISSN 1936-086X
R&D Projects: GA AV ČR IAA400400911; GA AV ČR IAA400400804; GA AV ČR KAN200100801; GA MŠMT ME09060; GA MŠMT LC510; GA ČR GC203/07/J067; GA ČR GAP204/10/1677
Institutional research plan: CEZ:AV0Z40400503
Keywords : graphene * Raman spectroscopy * spectroelectrochemistry
Subject RIV: CG - Electrochemistry
Impact factor: 9.855, year: 2010
Permanent Link: http://hdl.handle.net/11104/0192407
Number of the records: 1