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Defects in Individual Semiconducting Single Wall Carbon Nanotubes: Raman Spectroscopic and in Situ Raman Spectroelectrochemical Study
- 1.0353060 - ÚFCH JH 2011 RIV US eng J - Journal Article
Kalbáč, Martin - Hsieh, Y. P. - Farhat, H. - Kavan, Ladislav - Hofmann, M. - Kong, J. - Dresselhaus, M. S.
Defects in Individual Semiconducting Single Wall Carbon Nanotubes: Raman Spectroscopic and in Situ Raman Spectroelectrochemical Study.
Nano Letters. Roč. 10, č. 11 (2010), s. 4619-4626. ISSN 1530-6984. E-ISSN 1530-6992
R&D Projects: GA ČR GC203/07/J067; GA AV ČR IAA400400804; GA AV ČR IAA400400911; GA AV ČR KAN200100801; GA MŠMT ME09060
Institutional research plan: CEZ:AV0Z40400503
Keywords : single wall carbon nanotubes * Raman spectroscopy * defects
Subject RIV: CG - Electrochemistry
Impact factor: 12.186, year: 2010
Permanent Link: http://hdl.handle.net/11104/0192406
Number of the records: 1