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Influence of doping and non-stoichiometry on the quality of lead iodide for use in X-ray detection

  1. 1.
    0350311 - ÚFE 2011 RIV NL eng J - Journal Article
    Matuchová, M. - Žďánský, Karel - Zavadil, Jiří - Tonn, J. - Mousa, M. - Dinilewsky, A. N. - Croll, A. - Maixner, J.
    Influence of doping and non-stoichiometry on the quality of lead iodide for use in X-ray detection.
    Journal of Crystal Growth. Roč. 312, č. 8 (2010), s. 1233-1239. ISSN 0022-0248. E-ISSN 1873-5002
    R&D Projects: GA AV ČR(CZ) KAN401220801
    Institutional research plan: CEZ:AV0Z20670512
    Keywords : semiconductor devices * doping * detectors
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Impact factor: 1.737, year: 2010

    Permanent Link: http://hdl.handle.net/11104/0190346
     
Number of the records: 1  

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