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Intra-atomic charge re-organization at the Pb Si interface: bonding mechanism at low cover
- 1.0335755 - FZÚ 2010 RIV NL eng J - Journal Article
Švec, Martin - Dudr, Viktor - Vondráček, Martin - Jelínek, Pavel - Mutombo, Pingo - Cháb, Vladimír - Šutara, F. - Matolín, V. - Prince, K. C.
Intra-atomic charge re-organization at the Pb Si interface: bonding mechanism at low cover.
[Intra-atomární reorganizace náboje na Pb-Si rozhraní: vazebný mechanismus při nízkém pokrytí.]
Surface Science. Roč. 603, č. 18 (2009), s. 2861-2869. ISSN 0039-6028. E-ISSN 1879-2758
R&D Projects: GA AV ČR IAA1010413; GA AV ČR IAA100100616
Institutional research plan: CEZ:AV0Z10100521
Keywords : density functional calculations * green´s functional methods * synchrotron radiation photoelectron spectroscopy x-ray scattering * lead * silicon
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.798, year: 2009
Permanent Link: http://hdl.handle.net/11104/0180134
Number of the records: 1