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High photocarrier mobility in ultrafast ion-irradiated In.sub.0.53./sub.Ga.sub.0.47./sub.As
- 1.0330267 - FZÚ 2010 RIV GB eng J - Journal Article
Delagnes, J.C. - Mounaix, P. - Němec, Hynek - Fekete, Ladislav - Kadlec, Filip - Kužel, Petr - Martin, M. - Mangeney, J.
High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As.
[Vysoká pohyblivost fotoexcitovaných nositelů náboje v In0.53Ga0.47As ozářeném ionty.]
Journal of Physics D-Applied Physics. Roč. 42, č. 19 (2009), 195103/1-195103/6. ISSN 0022-3727. E-ISSN 1361-6463
R&D Projects: GA ČR(CZ) GP202/09/P099; GA AV ČR(CZ) IAA100100902
Institutional research plan: CEZ:AV0Z10100520
Keywords : InGaAs * photocarrier mobility * ultrafast photoconductivity terahertz * ion irradiation * terahertz * ion irradiation
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.083, year: 2009
Permanent Link: http://hdl.handle.net/11104/0176096
Number of the records: 1