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Deep defects in GaN/AlGaN/SiC hererostructures
- 1.0328675 - FZÚ 2010 RIV US eng J - Journal Article
Kindl, Dobroslav - Hubík, Pavel - Krištofik, Jozef - Mareš, Jiří J. - Výborný, Zdeněk - Leys, M.R. - Boeykens, S.
Deep defects in GaN/AlGaN/SiC hererostructures.
[Hluboké defekty v heterostrukturách GaN/AlGaN/SiC.]
Journal of Applied Physics. Roč. 105, č. 9 (2009), 093706/1-093706/8. ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA ČR GA202/07/0525
Institutional research plan: CEZ:AV0Z10100521
Keywords : nitrides * silicon carbide * deep levels * DLTS
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.072, year: 2009
Permanent Link: http://hdl.handle.net/11104/0174934
Number of the records: 1