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Growth and properties of InAs/In.sub.x./sub.Ga.sub.1-x./sub.As/GaAs quantum dot structures
- 1.0308047 - FZÚ 2008 RIV NL eng J - Journal Article
Hulicius, Eduard - Oswald, Jiří - Pangrác, Jiří - Vyskočil, Jan - Hospodková, Alice - Kuldová, Karla - Melichar, Karel - Šimeček, Tomislav
Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures.
[Růst a vlastnosti InAs/InxGa1-xAs/GaAs struktur s kvantovými tečkami.]
Journal of Crystal Growth. Roč. 310, 7-9 (2008), s. 2229-2233. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA AV ČR KJB101630601; GA AV ČR IAA100100719; GA ČR GA202/06/0718; GA ČR GA202/05/0242
Institutional research plan: CEZ:AV0Z10100521
Keywords : nanostructures * metalorganic vapor-phase epitaxy * semiconducting III–V materials
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.757, year: 2008
Permanent Link: http://hdl.handle.net/11104/0160642
Number of the records: 1