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Lateral shape of InAs/GaAs quantum dots in vertically correlated structures grown by MOVPE
- 1.0085194 - FZÚ 2008 RIV NL eng J - Journal Article
Hospodková, Alice - Křápek, V. - Mates, Tomáš - Kuldová, Karla - Pangrác, Jiří - Hulicius, Eduard - Oswald, Jiří - Melichar, Karel - Humlíček, J. - Šimeček, Tomislav
Lateral shape of InAs/GaAs quantum dots in vertically correlated structures grown by MOVPE.
[Laterální tvar InAs/GaAs kvantových teček ve vertikálně korelovaných strukturách připravených pomocí MOVPE.]
Journal of Crystal Growth. Roč. 298, - (2007), s. 570-573. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA AV ČR KJB101630601; GA ČR GA202/06/0718; GA ČR GA202/05/0242; GA MŠMT LC510; GA MŠMT(CZ) LC06040
Institutional research plan: CEZ:AV0Z10100521
Keywords : nanostructures * MOVPE * arsenides * semiconducting III-V materials
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.950, year: 2007
Permanent Link: http://hdl.handle.net/11104/0147758
Number of the records: 1