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Deposition of SiC thin films using pulsed sputtering of a hollow cathode
- 1.0331189 - FZÚ 2010 RIV US eng J - Journal Article
Soukup, R. J. - Ianno, N.J. - Huguenin-Love, J.L. - Lauer, N.T. - Hubička, Zdeněk
Deposition of SiC thin films using pulsed sputtering of a hollow cathode.
[Depozice SiC tenkých vrstev pomocí pulzního rozprašování duté katody.]
Journal of Materials Science and Engineering. Roč. 3, č. 8 (2009), s. 1-4. ISSN 1934-8959
R&D Projects: GA MŠMT(CZ) 1M06002
Institutional research plan: CEZ:AV0Z10100522
Keywords : hollow cathode * pulsed sputtering * 4H SiC
Subject RIV: BH - Optics, Masers, Lasers
Thin films of SiC have been deposited using a hollow cathode sputtering methodes. Crystalline SiC thin films were deposited by pulsed hollow cathode plasma excitation.
Tenké vrstvy SiC byly deponovány systémem s dutou katodou. Krystalické vrstvy SiC byly deponovány při pulzní excitaci plazmatu.
Permanent Link: http://hdl.handle.net/11104/0176779
Number of the records: 1