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Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications
- 1.0464495 - FZÚ 2017 RIV ZA eng A - Abstract
Hospodková, Alice - Nikl, Martin - Pacherová, Oliva - Oswald, Jiří - Foltynski, B. - Brůža, P. - Pánek, D. - Beitlerová, Alena - Oeztuerk, M. - Heuken, M. - Hulicius, Eduard
Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications.
SMEOS 2016 - Sensors, MEMS and Electro-Optical Systems /4./.Abstracts. Skukuza: SPIE, 2016 - (Schutte, C.). s. 62-62
[SMEOS 2016 - Sensors, MEMS and Electro-Optical Systems /4./. 12.09.2016-14.09.2016, Skukuza]
R&D Projects: GA ČR GA16-11769S; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : InGaN/GaN QWs * yellow luminescence * photoluminescence * x-ray diffraction
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0263376
Number of the records: 1