Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate

0538001 - ÚFE 2021 RIV NL eng J - Journal Article
Tiagulskyi, Stanislav - Yatskiv, Roman - Faitová, Hana - Kučerová, Šárka - Vaniš, Jan - Grym, Jan
Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate.
Materials Science in Semiconductor Processing. Roč. 107, 1 March (2020), č. článku 104808. ISSN 1369-8001. E-ISSN 1873-4081
R&D Projects: GA ČR(CZ) GA17-00546S; GA ČR(CZ) GA17-00355S
Institutional support: RVO:67985882
Keywords : Current-voltage characteristics * Focused ion beam patterning * Nanoscale heterojunctions * ZnO nanorods
OECD category: Electrical and electronic engineering
Impact factor: 3.927, year: 2020
Method of publishing: Limited access
https://doi.org/10.1016/j.mssp.2019.104808
Permanent Link: http://hdl.handle.net/11104/0315834