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Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment
- 1.0361427 - FZÚ 2013 RIV NL eng J - Journal Article
Lindgren, S. - Affolder, A.A. - Allport, P.P. - Bates, R. - Betancourt, C. - Böhm, Jan - Brown, H. - Buttar, C. - Carter, J. R. - Casse, G. - Mikeštíková, Marcela … Total 73 authors
Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment.
Nuclear Instruments & Methods in Physics Research Section A. Roč. 636, č. 1 (2011), "S111"-"S117". ISSN 0168-9002. E-ISSN 1872-9576
R&D Projects: GA MŠMT LA08032
Institutional research plan: CEZ:AV0Z10100502
Keywords : p-bulk silicon * surface damage * charge collection * punch-through voltage
Subject RIV: BF - Elementary Particles and High Energy Physics
Impact factor: 1.207, year: 2011
http://dx.doi.org/10.1016/j.nima.2010.04.094
Permanent Link: http://hdl.handle.net/11104/0198739
Number of the records: 1