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Photocurrent spectroscopy of semi-insulating GaAs with a new contact metallization: indication of 2DEG formed at the M-S interface
- 1.0349314 - FZÚ 2011 RIV SK eng C - Conference Paper (international conference)
Dubecký, F. - Kováč, J. - Mudroň, J. - Hubík, Pavel - Dubecký, M. - Gombia, E.
Photocurrent spectroscopy of semi-insulating GaAs with a new contact metallization: indication of 2DEG formed at the M-S interface.
APCOM 2010. Bratislava: Slovak University of Technology, 2010 - (Vajda, J.; Weis, M.), s. 29-32. ISBN 978-80-227-3307-6.
[International Conference on Applied Physics of Condensed Matter /16./. Malá Lučivná (SK), 16.06.2010-18.06.2010]
Institutional research plan: CEZ:AV0Z10100521
Keywords : SI-GaAs * detectors * photocurrent * blocking electrodes
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0189585
Number of the records: 1