Number of the records: 1
Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface
- 1.0342123 - FZÚ 2011 RIV RU eng J - Journal Article
Mikhailova, M. P. - Ivanov, E.V. - Moiseev, K. D. - Yakovlev, Yu. P. - Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří - Šimeček, Tomislav
Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface.
Semiconductors. Roč. 44, č. 1 (2010), 66-71. ISSN 1063-7826. E-ISSN 1090-6479
Institutional research plan: CEZ:AV0Z10100521
Keywords : electroluninescence * MOVPE * GaSb * InAs * quantum well
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.603, year: 2010
Permanent Link: http://hdl.handle.net/11104/0184942
Number of the records: 1