Secondary electron contrast in doped semiconductor with presence of a surface ad-layer

0335263 - ÚPT 2010 RIV AT eng C - Conference Paper (international conference)
Mika, Filip - Hovorka, Miloš - Frank, Luděk
Secondary electron contrast in doped semiconductor with presence of a surface ad-layer.
MC 2009 - Microscopy Conference: First Joint Meeting of Dreiländertagung and Multinational Conference on Microscopy. Graz: Verlag der Technischen Universität, 2009, Vol. 1: 199-200. ISBN 978-3-85125-062-6.
[MC 2009 - Joint Meeting of Dreiländertagung and Multinational Congress on Microscopy /9./. Graz (AT), 30.08.2009-04.09.2009]
R&D Projects: GA ČR GP102/09/P543; GA AV ČR IAA100650803
Institutional research plan: CEZ:AV0Z20650511
Keywords : dopant contrast * secondary electrons * semiconductor
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
http://www.univie.ac.at/asem/Graz_MC_09/papers/51426.pdf
Permanent Link: http://hdl.handle.net/11104/0179773