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Ultrafast infrared laser crystallization of amorphous Si/Ge multilayer structures
SYS 0571963 LBL 01000a^^22220027750^450 005 20240402213935.0 014 $a 85159364096 $2 SCOPUS 014 $a 000987318600001 $2 WOS 017 $a 10.3390/ma16093572 $2 DOI 100 $a 20230517d m y slo 03 ba 101 $a eng 102 $a CH 200 1-
$a Ultrafast infrared laser crystallization of amorphous Si/Ge multilayer structures 215 $a 12 s. 463 -1
$1 001 cav_un_epca*0378436 $1 011 $e 1996-1944 $1 200 1 $a Materials $v Roč. 16, č. 9 (2023) $1 205 $a ONLINE $1 210 $c MDPI 610 $a silicon–germanium multilayer structures 610 $a thin films 610 $a ultrashort infrared laser annealing 610 $a selective crystallization 610 $a defect accumulation 610 $a Raman spectroscopy 700 -1
$3 cav_un_auth*0363377 $a Bulgakov $b Alexander $p FZU-D $i Centrum HiLASE $j HiLASE Centre $w Development of Lasers and Advanced Technologies (HiLASE) $y RU $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0386936 $a Beránek $b Jiří $p FZU-D $i Centrum HiLASE $j HiLASE Centre $w Development of Lasers and Advanced Technologies (HiLASE) $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0342836 $a Volodin $b V.A. $y RU 701 -1
$3 cav_un_auth*0446583 $a Cheng $b Y. $y RU 701 -1
$3 cav_un_auth*0338595 $a Levy $b Yoann $p FZU-D $i Centrum HiLASE $j HiLASE Centre $w Development of Lasers and Advanced Technologies (HiLASE) $y FR $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0450105 $a Nagisetty $b S.S. $y DE 701 -1
$3 cav_un_auth*0429897 $a Zukerstein $b Martin $p FZU-D $i Centrum HiLASE $j HiLASE Centre $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0083262 $a Popov $b A. A. $y RU 701 -1
$3 cav_un_auth*0314159 $a Bulgakova $b Nadezhda M. $p FZU-D $i Centrum HiLASE $j HiLASE Centre $w Development of Lasers and Advanced Technologies (HiLASE) $y RU $z K $T Fyzikální ústav AV ČR, v. v. i. 856 $u https://hdl.handle.net/11104/0342818 $9 RIV
Number of the records: 1