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Integration of nanometer-thick 1T-TaS.sub.2./sub. films with silicon for an optically driven wide-band terahertz modulator
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$a 10.1021/acsanm.0c02076 $2 DOI 100 $a 20210204d m y slo 03 ba 101 0-
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$a Integration of nanometer-thick 1T-TaS2 films with silicon for an optically driven wide-band terahertz modulator 215 $a 10 s. 463 -1
$1 001 cav_un_epca*0506540 $1 011 $a 2574-0970 $1 200 1 $a ACS Applied Nano Materials $v Roč. 3, č. 11 (2020), s. 10767-10777 $1 210 $c American Chemical Society 608 $a Article 610 $a terahertz 610 $a modulator 610 $a conductivity 610 $a modulation depth 610 $a transmittance 700 -1
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$3 cav_un_auth*0394877 $a Kumar $b Prabhat $p FZU-D $i Tenké vrstvy a nanostruktury $j Thin Films and Nanostructures $T Fyzikální ústav AV ČR, v. v. i. 701 -1
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$3 cav_un_auth*0238281 $a Das $b S. $y IN 856 $u https://doi.org/10.1021/acsanm.0c02076 $9 RIV
Number of the records: 1