Number of the records: 1  

Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates

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    $a 10.1016/j.jcrysgro.2019.125167 $2 DOI
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    $a 20191023d m y slo 03 ba
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    $a eng $d eng
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    $a Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates
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    $a Atomic force microscopy
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    $a Nucleation
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    $a X-ray diffraction
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    $a Metalorganic vapor phase epitaxy
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    $a Nitrides
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    $a Semiconducting gallium compounds
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Number of the records: 1  

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