Number of the records: 1
Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy
SYS 0450842 LBL 01679^^^^^2200337^^^450 005 20240103211231.4 014 $a 000362388800006 $2 WOS 014 $a 84940853519 $2 SCOPUS 017 70
$a 10.2478/jee-2015-0036 $2 DOI 100 $a 20151120d m y slo 03 ba 101 0-
$a eng 102 $a CZ 200 1-
$a Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy 215 $a 5 s. 463 -1
$1 001 cav_un_epca*0296214 $1 011 $a 0013-578X $1 200 1 $a Journal of Electrical Engineering $v Roč. 66, č. 4 (2015), s. 226-230 610 0-
$a silicon solar-cells 610 0-
$a electrical noise 610 0-
$a tool 700 -1
$3 cav_un_auth*0019658 $a Chobola $b Z. $y CZ $4 070 701 -1
$3 cav_un_auth*0286079 $a Luňák $b M. $y CZ $4 070 701 -1
$3 cav_un_auth*0015169 $a Vaněk $b J. $y CZ $4 070 701 -1
$3 cav_un_auth*0100250 $a Hulicius $b Eduard $i Polovodiče $j Semiconductors $p FZU-D $w Semiconductors $4 070 $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0322682 $a Kusák $b I. $y CZ $4 070
Number of the records: 1