Number of the records: 1
Photocurrent spectroscopy of semi-insulating GaAs with a new contact metallization: indication of 2DEG formed at the M-S interface
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$a Photocurrent spectroscopy of semi-insulating GaAs with a new contact metallization: indication of 2DEG formed at the M-S interface 215 $a 4 s. 463 -1
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Number of the records: 1