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Influence of process parameters on the properties of TEOS DF-PECVD grown SiO2 films by DOE
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$a Influence of process parameters on the properties of TEOS DF-PECVD grown SiO2 films by DOE 215 $a 2 s. 463 -1
$1 001 cav_un_epca*0335255 $1 010 $a 978-3-85125-062-6 $1 200 1 $a MC 2009 - Microscopy Conference: First Joint Meeting of Dreiländertagung and Multinational Conference on Microscopy $v Vol. 3: 463-464 $1 210 $a Graz $c Verlag der Technischen Universität $d 2009 610 0-
$a DF-PECVD 610 0-
$a silicon dioxide 610 0-
$a intrinsic stress 610 0-
$a DOE 610 0-
$a SEM 700 -1
$3 cav_un_auth*0258032 $a Mikmeková $b Eliška $i S1: Elektronová optika a mikroskopie $j S1: Electron optics and microscopy $p UPT-D $w Electron Microscopy $4 070 $T Ústav přístrojové techniky AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0221072 $a Janča $b J. $y CZ $4 070 701 -1
$3 cav_un_auth*0065857 $a Dvořáková $b M. $y CZ $4 070 856 $u http://www.univie.ac.at/asem/Graz_MC_09/papers/65557.pdf
Number of the records: 1