Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates

Lee, L.Y., Frentrup, M., Vacek, P., Massabuau, F. C. P., Kappers, M. J., Wallis, D. J., Oliver, R. A. Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates. Journal of Crystal Growth. 2019, 524(OCT), 125167. ISSN 0022-0248. E-ISSN 1873-5002. Available: doi: 10.1016/j.jcrysgro.2019.125167.