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Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface
- 1.Hubáček, T., Hospodková, A., Oswald, J., Kuldová, K., Pangrác, J., Zíková, M., Hájek, F., Dominec, F., Florini, N., Komninou, P., Ledoux, G., Dujardin, C. Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface. Journal of Crystal Growth. 2019, 507(Feb), 310-315. ISSN 0022-0248. E-ISSN 1873-5002. Available: doi: 10.1016/j.jcrysgro.2018.11.038
Number of the records: 1