Number of the records: 1
Damage accumulation and structural modification in c-plane and a-plane GaN implanted with 400 keV Kr and Gd ions
- 1.Macková, A., Malinský, P., Jagerová, A., Sofer, Z., Klímová, K., Sedmidubský, D., Mikulics, M., Bottger, R., Akhmadaliev, S. Damage accumulation and structural modification in c-plane and a-plane GaN implanted with 400 keV Kr and Gd ions. Surface and Coatings Technology. 2018, 355(SI), 22-28. ISSN 0257-8972. Available: doi: 10.1016/j.surfcoat.2018.02.097
Number of the records: 1