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GaAsSb strain reducing layers for InAs/GaAs quantum dot long wavelength and high efficiency emission

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    Hospodková, A., Pangrác, J., Oswald, J., Kuldová, K., Vyskočil, J., Hulicius, E., Hazdra, P. GaAsSb strain reducing layers for InAs/GaAs quantum dot long wavelength and high efficiency emission. In: PRAZMOWSKA, J., ed. EWMOVPE XIV. Wroclaw: Printing house of Wroclaw University of Technology, 2011, s. 105-108. ISBN 978-83-7493-599-9.
Number of the records: 1  

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