Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs

Hazdra, P., Oswald, J., Komarnitskyy, V., Kuldová, K., Hospodková, A., Hulicius, E., Pangrác, J. Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs. Superlattices and Microstructures. 2009, 46(1-2), 324-327. ISSN 0749-6036. E-ISSN 1096-3677. Available: doi: 10.1016/j.spmi.2008.12.002