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Properties of Er and Yb Doped Gallium nitride layers fabricated by magnetron sputtering
- 1.Prajzler, V., Burian, Z., Hüttel, I., Špirková, J., Hamáček, J., Oswald, J., Zavadil, J., Peřina, V. Properties of Er and Yb Doped Gallium nitride layers fabricated by magnetron sputtering. Acta Polytechnica. 2006, 46(6), 49-55. ISSN 1210-2709. E-ISSN 1805-2363.
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