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Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs
- 1.Hospodková, A., Hulicius, E., Oswald, J., Pangrác, J., Mates, T., Kuldová, K., Melichar, K., Šimeček, T. Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs. Journal of Crystal Growth. 2007, 298(-), 582-858. ISSN 0022-0248. E-ISSN 1873-5002.
Number of the records: 1