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Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates
- 1.LEE, L.Y., FRENTRUP, M., VACEK, P., MASSABUAU, F. C. P., KAPPERS, M. J., WALLIS, D. J., OLIVER, R. A. Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates. Journal of Crystal Growth. 2019, 524(OCT), 125167. ISSN 0022-0248. E-ISSN 1873-5002. Available: doi: 10.1016/j.jcrysgro.2019.125167.
Number of the records: 1