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Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface
- 1.HUBÁČEK, T., HOSPODKOVÁ, A., OSWALD, J., KULDOVÁ, K., PANGRÁC, J., ZÍKOVÁ, M., HÁJEK, F., DOMINEC, F., FLORINI, N., KOMNINOU, P., LEDOUX, G., DUJARDIN, C. Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface. Journal of Crystal Growth. 2019, 507(Feb), 310-315. ISSN 0022-0248. E-ISSN 1873-5002. Available: doi: 10.1016/j.jcrysgro.2018.11.038
Number of the records: 1