Number of the records: 1
Damage accumulation and structural modification in a- and c-plane GaN implanted with 400-keV and 5-MeV Au+ ions
- 1.MACKOVÁ, A., MALINSKÝ, P., JAGEROVÁ, A., SOFER, Z., SEDMIDUBSKÝ, D., KLÍMOVÁ, K., BOTTGER, R., AKHMADALIEV, S. Damage accumulation and structural modification in a- and c-plane GaN implanted with 400-keV and 5-MeV Au+ ions. Surface and Interface Analysis. 2018, 50(11), 1099-1105. ISSN 0142-2421. E-ISSN 1096-9918. Available: doi: 10.1002/sia.6403
Number of the records: 1