Investigation of Boron containing AlN and AlGaN layers grown by MOVPE

RETTIG, O., SCHOLZ, J.P., STEIGER, N., BAUER, S., HUBÁČEK, T., ZÍKOVÁ, M., LI, Y., QI, H., BISKUPEK, J., KAISER, U., THONKE, K., SCHOLZ, F. Investigation of Boron containing AlN and AlGaN layers grown by MOVPE. Physica Status Solidi B. 2018, 255(5), 1-9), 1700510. ISSN 0370-1972. E-ISSN 1521-3951. Available: doi: 10.1002/pssb.201700510