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The use of Raman spectroscopy for the monitoring of changes in the glass structure of the thin layers caused by ion implantation
- 1.NEKVINDOVÁ, P., ŠVECOVÁ, B., STANĚK, S., VYTYKAČOVÁ, S., MACKOVÁ, A., MALINSKÝ, P., MACHOVIČ, V., ŠPIRKOVÁ, J. The use of Raman spectroscopy for the monitoring of changes in the glass structure of the thin layers caused by ion implantation. Ceramics - Silikáty. 2015, 59(3), 187-193. ISSN 0862-5468. E-ISSN 1804-5847.
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