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Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor
- 1.CICCARELLI, C., PARK, B.G., OGAWA, S., FERGUSON, A.J., WUNDERLICH, J. Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor. Applied Physics Letters. 2010, 97(8), 082106/1-082106/3. ISSN 0003-6951. E-ISSN 1077-3118. Available: doi: 10.1063/1.3475771
Number of the records: 1