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Anomalous charge current transport in semi-insulatingGaAs with a new contact metallization: Influence of 2DEG formed at the M-S interface
- 1.DUBECKÝ, F., HUBÍK, P., GOMBIA, E., ZAT'KO, B., KINDL, D., DUBECKÝ, M., BOHÁČEK, P. Anomalous charge current transport in semi-insulatingGaAs with a new contact metallization: Influence of 2DEG formed at the M-S interface. In: BRUNNER, R., ed. SURFINT-SREN II. Bratislava: Comenius University, 2010, s. 19-22. ISBN 978-80-223-2723-7.
Number of the records: 1