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Photocurrent spectroscopy of semi-insulating GaAs with a new contact metallization: indication of 2DEG formed at the M-S interface
- 1.DUBECKÝ, F., KOVÁČ, J., MUDROŇ, J., HUBÍK, P., DUBECKÝ, M., GOMBIA, E. Photocurrent spectroscopy of semi-insulating GaAs with a new contact metallization: indication of 2DEG formed at the M-S interface. In: VAJDA, J., WEIS, M., eds. APCOM 2010. Bratislava: Slovak University of Technology, 2010, s. 29-32. ISBN 978-80-227-3307-6.
Number of the records: 1