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Growth and characterization of GaN:Mn layers by MOVPE
- 1.SOFER, Z., SEDMIDUBSKÝ, D., STEJSKAL, J., HEJTMÁNEK, J., MARYGSKO, M., JUREK, K., VÁCLAVŮ, M., HAVRÁNEK, V., MACKOVÁ, A. Growth and characterization of GaN:Mn layers by MOVPE. Journal of Crystal Growth. 2008, 310(23), 5025-5027. ISSN 0022-0248. E-ISSN 1873-5002. Available: doi: 10.1016/j.jcrysgro.2008.07.103
Number of the records: 1