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Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs
- 1.HOSPODKOVÁ, A., HULICIUS, E., OSWALD, J., PANGRÁC, J., MATES, T., KULDOVÁ, K., MELICHAR, K., ŠIMEČEK, T. Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs. Journal of Crystal Growth. 2007, 298(-), 582-858. ISSN 0022-0248. E-ISSN 1873-5002.
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