Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates

LEE, L.Y., FRENTRUP, M., VACEK, Petr, MASSABUAU, Fabien C. P., KAPPERS, Menno J., WALLIS, David J., OLIVER, Rachel A. Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates. Journal of Crystal Growth. 2019, 524(OCT), 125167. ISSN 0022-0248. E-ISSN 1873-5002. Available: doi: 10.1016/j.jcrysgro.2019.125167.