Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface

HUBÁČEK, Tomáš, HOSPODKOVÁ, Alice, OSWALD, Jiří, KULDOVÁ, Karla, PANGRÁC, Jiří, ZÍKOVÁ, Markéta, HÁJEK, František, DOMINEC, Filip, FLORINI, N., KOMNINOU, Ph., LEDOUX, G., DUJARDIN, C. Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface. Journal of Crystal Growth. 2019, 507(Feb), 310-315. ISSN 0022-0248. E-ISSN 1873-5002. Available: doi: 10.1016/j.jcrysgro.2018.11.038