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The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene
- 1.KALBÁČ, Martin, REINA-CECCO, A., FARHAT, H., KONG, J., KAVAN, Ladislav, DRESSELHAUS, M. S. The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene. ACS Nano. 2010, 4(10), 6055-6063. ISSN 1936-0851. E-ISSN 1936-086X. Available: doi: 10.1021/nn1010914
Number of the records: 1