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Optoelectronic properties of hydrogenated amorphous substoichiometric a-SiC:H with low carbon content deposited on semi-transparent ZnO
- 1.Remeš, Z., Chang, Y.-Y., Stuchlíková, T.-H., Stuchlík, J., Shu, H.H. Optoelectronic properties of hydrogenated amorphous substoichiometric a-SiC:H with low carbon content deposited on semi-transparent ZnO. In: BEHÚLOVÁ, M., KOŽÍŠEK, Z., PAPÁNKOVÁ, B., eds. Book of Abstracts of the 29th Joint Seminar of the Development of Materials Science in Research and Education (DMS – RE 2019). Bratislava: STU Bratislava, 2019, s. 41-41. ISBN 978-80-8208-019-6.
Number of the records: 1